IXBT10N170 - IGBT DIS.DIODE SINGLE 10A 1700V BIMOSFET TO268


* Representative Image

Product Name IXBT10N170 Copy
Product Description IGBT DIS.DIODE SINGLE 10A 1700V BIMOSFET TO268
Stock 299
Transit orders No Transit Order
Delivery Time If you place your order before 15:00 on Turkish time, it will be shipped the same day.
* Özdisan keeps the right of next working day shipment according to order’s item amount
MPQ 30
MOQ 1
Unit Price
Unit Unit Price USD Unit Price TL    ( )
1 4.96503 USD 34.08394 ₺ +KDV
100 4.46853 USD 30.67554 ₺ +KDV
250 4.22028 USD 28.97135 ₺ +KDV
500 3.97202 USD 27.26715 ₺ +KDV
1,000 3.47552 USD 23.85876 ₺ +KDV
Product Property: Select All :
Manufacturer IXYS
Mounting Type SMT
Package / Case TO268 (D3PAK)
Technology BIMOSFET
Diode WITH DIODE
Ic 25°C 20A
Current 10A
Temperature (IC) 90°C
Voltage 1700V
Operating Temperature -55°C~+150°C
Tj °C 150°C
VCE Sat 3.4V
Power Dissipation 130W
Configuration SINGLE
Rohs NON ROHS
Packaging TUBE