MII200-12A4 - IGBT MOD.DIODE DUAL 180A 1200V SOA Y3-DCB CHASSIS


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Product Name MII200-12A4 Copy
Product Description IGBT MOD.DIODE DUAL 180A 1200V SOA Y3-DCB CHASSIS
Stock No Stock
Transit orders No Transit Order
Delivery Time Get Delivery Time
MPQ 2
MOQ 1
Unit Price
Unit Unit Price USD Unit Price TL   ( )
1 288.10373 USD 5502.78115 ₺ + KDV
2 + 274.38450 USD 5240.74395 ₺ + KDV
Production Status Obsolete
Product Property: Select All :
Manufacturer IXYS
Mounting Type CHASSIS
Package / Case Y3-DCB
Technology SOA CAPABILITY
Diode WITH DIODE
Ic 25°C 270A
Current 180A
Temperature (IC) 80°C
Voltage 1200V
Operating Temperature -40°C ~ +150°C
Tj °C 150°C
VCE Sat 2.2V
Power Dissipation 1130W
Configuration DUAL
Rohs ROHS
Packaging BOX
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