IXBT12N300HV - IGBT DIS.DIODE SINGLE 12A 3000V TO-268 BIMOSFET


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Product Name IXBT12N300HV Copy
Product Description IGBT DIS.DIODE SINGLE 12A 3000V TO-268 BIMOSFET
Stock 30
Transit orders No Transit Order
Delivery Time If you place your order before 14:00 on Turkish time, it will be shipped the same day.
* Özdisan keeps the right of next working day shipment according to order’s item amount
MPQ 30
MOQ 1
Unit Price
Unit Unit Price USD Unit Price TL   ( )
1 46.25856 USD 392.27260 ₺ + KDV
30 + 43.23230 USD 366.60990 ₺ + KDV
Product Property: Select All :
Manufacturer IXYS
Mounting Type SMT
Package / Case TO268 (D3PAK)
Technology BIMOSFET
Diode WITH DIODE
Ic 25°C 30A
Current 12A
Temperature (IC) 110°C
Voltage 3000V
Operating Temperature -55°C ~ +150°C
Tj °C 150°C
VCE Sat 2.8V
Power Dissipation 160W
Configuration SINGLE
Rohs ROHS
Packaging TUBE
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